Programming memory cells of memory devices

ABSTRACT

One embodiment of a method for programming multiple-level memory cells includes programming lower page data to memory cells in a first pass of a multiple-pass programming operation. The method includes programming higher page data to the memory cells in a second pass of the multiple-pass programming operation such that higher page data subject to the programmed lower page data is programmed prior to higher page data subject to erase data.

RELATED APPLICATION

This Application is a Divisional of U.S. application Ser. No.16/228,904, titled “PROGRAMMING MULTIPLE-LEVEL MEMORY CELLS WITHMULTIPLE-PASS” filed Dec. 21, 2018, (Allowed) which is commonly assignedand incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates generally to memory and, in particular,in one or more embodiments, the present disclosure relates to apparatusand methods to program multiple-level memory cells.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuit devices in computers or other electronic devices.There are many different types of memory including random-access memory(RAM), read only memory (ROM), dynamic random access memory (DRAM),synchronous dynamic random access memory (SDRAM), and flash memory.

Flash memory has developed into a popular source of non-volatile memoryfor a wide range of electronic applications. Flash memory typically usea one-transistor memory cell that allows for high memory densities, highreliability, and low power consumption. Changes in threshold voltage(Vt) of the memory cells, through programming (which is often referredto as writing) of charge storage structures (e.g., floating gates orcharge traps) or other physical phenomena (e.g., phase change orpolarization), determine the data state (e.g., data value) of eachmemory cell. Common uses for flash memory and other non-volatile memoryinclude personal computers, personal digital assistants (PDAs), digitalcameras, digital media players, digital recorders, games, appliances,vehicles, wireless devices, mobile telephones, and removable memorymodules, and the uses for non-volatile memory continue to expand.

A NAND flash memory is a common type of flash memory device, so calledfor the logical form in which the basic memory cell configuration isarranged. Typically, the array of memory cells for NAND flash memory isarranged such that the control gate of each memory cell of a row of thearray is connected together to form an access line, such as a word line.Columns of the array include strings (often termed NAND strings) ofmemory cells connected together in series between a pair of selectgates, e.g., a source select transistor and a drain select transistor.Each source select transistor may be connected to a source, while eachdrain select transistor may be connected to a data line, such as columnbit line. Variations using more than one select gate between a string ofmemory cells and the source, and/or between the string of memory cellsand the data line, are known.

In programming memory, memory cells may generally be programmed as whatare often termed single-level cells (SLC) or multiple-level cells (MLC).SLC may use a single memory cell to represent one digit (e.g., bit) ofdata. For example, in SLC, a Vt of 2.5V might indicate a programmedmemory cell (e.g., representing a logical 0) while a Vt of −0.5V mightindicate an erased cell (e.g., representing a logical 1). As an example,the erased state in SLC might be represented by any threshold voltageless than or equal to 0V, while the programmed data state might berepresented by any threshold voltage greater than 0V.

MLC uses more than two Vt ranges, where each Vt range indicates adifferent data state. As is generally known, a margin (e.g., a certainnumber of volts), such as a dead space, may separate adjacent Vt ranges,e.g., to facilitate differentiating between data states. Multiple-levelcells can take advantage of the analog nature of traditionalnon-volatile memory cells by assigning a bit pattern to a specific Vtrange. While MLC typically uses a memory cell to represent one datastate of a binary number of data states (e.g., 4, 8, 16, . . . ), amemory cell operated as MLC may be used to represent a non-binary numberof data states. For example, where the MLC uses three Vt ranges, twomemory cells might be used to collectively represent one of eight datastates.

In programming MLC memory, data values are often programmed using morethan one pass, e.g., programming one or more digits in each pass. Forexample, in four-level MLC (typically referred to simply as MLC), afirst digit, e.g., a least significant bit (LSB), often referred to aslower page (LP) data, may be programmed to the memory cells in a firstpass, thus resulting in two (e.g., first and second) threshold voltageranges. Subsequently, a second digit, e.g., a most significant bit(MSB), often referred to as upper page (UP) data may be programmed tothe memory cells in a second pass, typically moving some portion ofthose memory cells in the first threshold voltage range into a thirdthreshold voltage range, and moving some portion of those memory cellsin the second threshold voltage range into a fourth threshold voltagerange. Similarly, eight-level MLC (typically referred to as TLC) mayrepresent a bit pattern of three bits, including a first digit, e.g., aleast significant bit (LSB) or lower page (LP) data; a second digit,e.g., upper page (UP) data; and a third digit, e.g., a most significantbit (MSB) or extra page (XP) data. In operating TLC, the LP data may beprogrammed to the memory cells in a first pass, resulting in twothreshold voltage ranges, followed by the UP data and the XP data in asecond pass, resulting in eight threshold voltage ranges.

In each pass, programming typically utilizes an iterative process ofapplying a programming pulse to a memory cell and verifying if thatmemory cell has reached its desired data state in response to thatprogramming pulse, and repeating that iterative process until thatmemory cell passes the verification. Once a memory cell passes theverification, it may be inhibited from further programming. Theiterative process can be repeated with changing (e.g., increasing)voltage levels of the programming pulse until each memory cell selectedfor the programming operation has reached its respective desired datastate, or some failure is declared, e.g., reaching a maximum number ofallowed programming pulses during the programming operation.

In a multiple-pass programming operation, the threshold voltage of thelower page programmed cells may shift down due to the charge lossmechanism. In this case, when higher page data is programmed to thememory cells in a second pass of the multiple-pass programmingoperation, the memory cells with a program level closest to the lowerpage programmed cells may overlap with the existing lower pageprogrammed cells. If a power loss occurs before completing programmingof the higher page data, when the power is restored the thresholdvoltages of the overlapped memory cells cannot be distinguished fromeach other, which may result in data loss.

For the reasons stated above, and for other reasons stated below whichwill become apparent to those skilled in the art upon reading andunderstanding the present specification, there is a need in the art foralternative methods for programming multiple-level memory cells andsystem and apparatus to perform such methods.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified block diagram of one embodiment of a memorydevice in communication with a processor as part of an electronicsystem.

FIGS. 2A-2B are schematic diagrams of portions of an array of memorycells as could be used in a memory device of the type described withreference to FIG. 1.

FIG. 3 depicts representations of populations of memory cells at variousstages of a programming operation according to an embodiment.

FIG. 4 depicts representations of populations of memory cells at variousstages of a programming operation according to another embodiment.

FIG. 5 depicts representations of populations of memory cells at variousstages of a programming operation according to another embodiment.

FIG. 6 depicts representations of populations of memory cells at variousstages of a programming operation according to another embodiment.

FIGS. 7A-7B depict a parallel programming operation according to anembodiment.

FIGS. 8A-8B depict a parallel programming operation according to anotherembodiment.

FIG. 9 depicts representations of populations of memory cells at variousstages of a programming operation according to another embodiment.

FIGS. 10A-10B are flow diagrams illustrating one embodiment of a methodfor programming multiple-level memory cells.

FIGS. 11A-11B are flow diagrams illustrating another embodiment of amethod for programming multiple-level memory cells.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings that form a part hereof, and in which is shown, byway of illustration, specific embodiments. In the drawings, likereference numerals describe substantially similar components throughoutthe several views. Other embodiments may be utilized and structural,logical and electrical changes may be made without departing from thescope of the present disclosure. The following detailed description is,therefore, not to be taken in a limiting sense.

Disclosed herein are methods and apparatus for programming an array ofmultiple-level memory cells to prevent overlapping of the lower pagedata and the higher page data during multiple-pass programmingoperations. A controller of a memory device may be configured to programthe multiple-level memory cells via a multiple-pass programmingoperation. In one embodiment, the controller is configured to programlower page data to the memory cells in a first pass and reprogram thelower page data to the memory cells and program higher page data to thememory cells in a second pass. In another embodiment, the controller isconfigured to program lower page data to the memory cells in a firstpass and program higher page data to the memory cells in a second passsuch that memory cells to be programmed to higher levels are programmedprior to memory cells to be programmed to lower levels. In yet anotherembodiment, the controller is configured to program lower page data in afirst pass and program higher page data in a second pass such thatmemory cells to be programmed to a higher level are programmed inparallel with memory cells to be programmed to a lower level.

FIG. 1 is a simplified block diagram of a first apparatus, in the formof a memory device 100, in communication with a second apparatus, in theform of a processor 130, as part of a third apparatus, in the form of anelectronic system, according to an embodiment. Some examples ofelectronic systems include personal computers, tablet computers, digitalcameras, digital media players, digital recorders, games, appliances,vehicles, wireless devices, cellular telephones and the like. Theprocessor 130, e.g., a controller external to the memory device 100, maybe a memory controller or other external host device.

Memory device 100 includes an array of memory cells 104 logicallyarranged in rows and columns. Memory cells of a logical row aretypically coupled to the same access line (commonly referred to as aword line) while memory cells of a logical column are typicallyselectively coupled to the same data line (commonly referred to as a bitline). A single access line may be associated with more than one logicalrow of memory cells and a single data line may be associated with morethan one logical column. Memory cells (not shown in FIG. 1) of at leasta portion of array of memory cells 104 are capable of being programmedto one of at least two data states.

A row decode circuitry 108 and a column decode circuitry 110 areprovided to decode address signals. Address signals are received anddecoded to access the array of memory cells 104. Memory device 100 alsoincludes I/O control circuitry 112 to manage input of commands,addresses and data to the memory device 100 as well as output of dataand status information from the memory device 100. An address register114 is in communication with I/O control circuitry 112 and row decodecircuitry 108 and column decode circuitry 110 to latch the addresssignals prior to decoding. A command register 124 is in communicationwith I/O control circuitry 112 and control logic 116 to latch incomingcommands.

An internal controller (e.g., control logic 116) controls access to thearray of memory cells 104 in response to the commands and generatesstatus information for the external processor 130, i.e., control logic116 is configured to perform access operations in accordance withembodiments described herein. The control logic 116 is in communicationwith row decode circuitry 108 and column decode circuitry 110 to controlthe row decode circuitry 108 and column decode circuitry 110 in responseto the addresses.

Control logic 116 is also in communication with a cache register 118.Cache register 118 latches data, either incoming or outgoing, asdirected by control logic 116 to temporarily store data while the arrayof memory cells 104 is busy writing or reading, respectively, otherdata. During a program operation (e.g., write operation), data is passedfrom sensing devices 106 to the cache register 118. The data is thenpassed from the cache register 118 to data register 120 for transfer tothe array of memory cells 104; then new data is latched in the cacheregister 118 from sensing devices 106, which receive the new data fromthe I/O control circuitry 112. During a read operation, data is passedfrom the cache register 118 to sensing devices 106, which pass the datato the I/O control circuitry 112 for output to the external processor130; then new data is passed from the data register 120 to the cacheregister 118. A status register 122 is in communication with I/O controlcircuitry 112 and control logic 116 to latch the status information foroutput to the processor 130.

Memory device 100 receives control signals at control logic 116 fromprocessor 130 over a control link 132. The control signals may includeat least a chip enable CE #, a command latch enable CLE, an addresslatch enable ALE, a write enable WE #, and a read enable RE #.Additional control signals (not shown) may be further received overcontrol link 132 depending upon the nature of the memory device 100.Memory device 100 receives command signals (which represent commands),address signals (which represent addresses), and data signals (whichrepresent data) from processor 130 over a multiplexed input/output (I/O)bus 134 and outputs data to processor 130 over I/O bus 134.

For example, the commands are received over input/output (I/O) pins[7:0] of I/O bus 134 at I/O control circuitry 112 and are written intocommand register 124. The addresses are received over input/output (I/O)pins [7:0] of bus 134 at I/O control circuitry 112 and are written intoaddress register 114. The data are received over input/output (I/O) pins[7:0] for an 8-bit device or input/output (I/O) pins [15:0] for a 16-bitdevice at I/O control circuitry 112 and are written into cache register118 through sensing devices 106. The data are subsequently written intodata register 120 for programming the array of memory cells 104. Foranother embodiment, cache register 118 may be omitted, and the data arewritten directly into data register 120 through sensing devices 106.Data are also output over input/output (I/O) pins [7:0] for an 8-bitdevice or input/output (I/O) pins [15:0] for a 16-bit device.

It will be appreciated by those skilled in the art that additionalcircuitry and signals can be provided, and that the memory device ofFIG. 1 has been simplified. It should be recognized that thefunctionality of the various block components described with referenceto FIG. 1 may not necessarily be segregated to distinct components orcomponent portions of an integrated circuit device. For example, asingle component or component portion of an integrated circuit devicecould be adapted to perform the functionality of more than one blockcomponent of FIG. 1. Alternatively, one or more components or componentportions of an integrated circuit device could be combined to performthe functionality of a single block component of FIG. 1.

Additionally, while specific I/O pins are described in accordance withpopular conventions for receipt and output of the various signals, it isnoted that other combinations or numbers of I/O pins may be used in thevarious embodiments.

FIG. 2A is a schematic of a NAND memory array 200A, e.g., as a portionof array of memory cells 104. Memory array 200A includes access lines,such as word lines 202 ₀ to 202 _(N), and data lines, such as bit lines204 ₀ to 204 _(M). The word lines 202 may be coupled to global accesslines (e.g., global word lines), not shown in FIG. 2A, in a many-to-onerelationship. For some embodiments, memory array 200A may be formed overa semiconductor that, for example, may be conductively doped to have aconductivity type, such as a p-type conductivity, e.g., to form ap-well, or an n-type conductivity, e.g., to form an n-well.

Memory array 200A might be arranged in rows (each corresponding to aword line 202) and columns (each corresponding to a bit line 204). Eachcolumn may include a string of series-coupled memory cells, such as oneof NAND strings 206 ₀ to 206 _(M). Each NAND string 206 might be coupledto a common source 216 and might include memory cells 208 ₀ to 208 _(N).The memory cells 208 represent non-volatile memory cells for storage ofdata. The memory cells 208 of each NAND string 206 might be connected inseries between a select transistor 210 (e.g., a field-effecttransistor), such as one of the select transistors 210 ₀ to 210 _(M)(e.g., that may be source select transistors, commonly referred to asselect gate source), and a select transistor 212 (e.g., a field-effecttransistor), such as one of the select transistors 212 ₀ to 212 _(M)(e.g., that may be drain select transistors, commonly referred to asselect gate drain). Select transistors 210 ₀ to 210 _(M) might becommonly coupled to a select line 214, such as a source select line, andselect transistors 212 ₀ to 212 _(M) might be commonly coupled to aselect line 215, such as a drain select line.

A source of each select transistor 210 might be connected to commonsource 216. The drain of each select transistor 210 might be connectedto the source of a memory cell 208 ₀ of the corresponding NAND string206. For example, the drain of select transistor 210 ₀ might beconnected to the source of memory cell 208 ₀ of the corresponding NANDstring 206 ₀. Therefore, each select transistor 210 might be configuredto selectively couple a corresponding NAND string 206 to common source216. A control gate of each select transistor 210 might be connected toselect line 214.

The drain of each select transistor 212 might be connected to the bitline 204 for the corresponding NAND string 206. For example, the drainof select transistor 212 ₀ might be connected to the bit line 204 ₀ forthe corresponding NAND string 206 ₀. The source of each selecttransistor 212 might be connected to the drain of a memory cell 208 _(N)of the corresponding NAND string 206. For example, the source of selecttransistor 212 ₀ might be connected to the drain of memory cell 208 _(N)of the corresponding NAND string 206 ₀. Therefore, each selecttransistor 212 might be configured to selectively couple a correspondingNAND string 206 to a corresponding bit line 204. A control gate of eachselect transistor 212 might be connected to select line 215.

The memory array in FIG. 2A might be a quasi-two-dimensional memoryarray and might have a generally planar structure, e.g., where thecommon source 216, strings 206 and bit lines 204 extend in substantiallyparallel planes. Alternatively, the memory array in FIG. 2A might be athree-dimensional memory array, e.g., where strings 206 may extendsubstantially perpendicular to a plane containing the common source 216and to a plane containing the bit lines 204 that may be substantiallyparallel to the plane containing the common source 216.

Typical construction of memory cells 208 includes a data-storagestructure 234 (e.g., a floating gate, charge trap, etc.) that candetermine a data value of the cell (e.g., through changes in thresholdvoltage), and a control gate 236, as shown in FIG. 2A. Memory cells 208may further have a defined source 230 and a defined drain 232. Memorycells 208 have their control gates 236 coupled to (and in some casesform) a word line 202.

A column of the memory cells 208 is a NAND string 206 or a plurality ofNAND strings 206 coupled to a given bit line 204. A row of the memorycells 208 are memory cells 208 commonly coupled to a given word line202. A row of memory cells 208 can, but need not include all memorycells 208 commonly coupled to a given word line 202. Rows of memorycells 208 may often be divided into one or more groups of physical pagesof memory cells 208, and physical pages of memory cells 208 ofteninclude every other memory cell 208 commonly coupled to a given wordline 202. For example, memory cells 208 commonly coupled to word line202 _(N) and selectively coupled to even bit lines 204 (e.g., bit lines204 ₀, 204 ₂, 204 ₄, etc.) may be one physical page of memory cells 208(e.g., even memory cells) while memory cells 208 commonly coupled toword line 202 _(N) and selectively coupled to odd bit lines 204 (e.g.,bit lines 204 ₁, 204 ₃, 204 ₅, etc.) may be another physical page ofmemory cells 208 (e.g., odd memory cells). Although bit lines 204 ₃ 204₅ are not expressly depicted in FIG. 2A, it is apparent from the figurethat the bit lines 204 of the array of memory cells 200A may be numberedconsecutively from bit line 204 ₀ to bit line 204 _(M). Other groupingsof memory cells 208 commonly coupled to a given word line 202 may alsodefine a physical page of memory cells 208. For certain memory devices,all memory cells commonly coupled to a given word line might be deemed aphysical page. The portion of a physical page (which, in someembodiments, could still be the entire row) that is read during a singleread operation or programmed during a program operation (e.g., an upperor lower page memory cells) might be deemed a logical page.

FIG. 2B is another schematic of a portion of an array of memory cells200B as could be used in a memory of the type described with referenceto FIG. 1, e.g., as a portion of array of memory cells 104. Likenumbered elements in FIG. 2B correspond to the description as providedwith respect to FIG. 2A. FIG. 2B provides additional detail of oneexample of a three-dimensional NAND memory array structure. Thethree-dimensional NAND memory array 200B may incorporate verticalstructures which may include semiconductor pillars where a portion of apillar may act as a channel region of the memory cells of NAND strings206. The NAND strings 206 may be each selectively connected to a bitline 204 ₀ to 204 _(M) by a select transistor 212 (e.g., that may bedrain select transistors, commonly referred to as select gate drain) andto a common source 216 by a select transistor 210 (e.g., that may besource select transistors, commonly referred to as select gate source).Multiple NAND strings 206 might be selectively connected to the same bitline 204. Subsets of NAND strings 206 can be connected to theirrespective bit lines 204 by biasing the select lines 215 ₀ to 215 _(L)to selectively activate particular select transistors 212 each between aNAND string 206 and a bit line 204. The select transistors 210 can beactivated by biasing the select line 214. Each word line 202 may beconnected to multiple rows of memory cells of the memory array 200B.Rows of memory cells that are commonly connected to each other by aparticular word line 202 may collectively be referred to as tiers.

Although the examples of FIGS. 2A-2B are discussed in conjunction withNAND flash, the embodiments described herein are not limited to aparticular array architecture or structure, and can include otherstructures (e.g., cross-point memory, DRAM, etc.) and otherarchitectures (e.g., AND arrays, NOR arrays, etc.).

FIG. 3 depicts representations of populations of memory cells at variousstages of a programming operation according to an embodiment. In thisexample, a two to eight state multiple-pass programming operation isused to program a TLC memory. The memory cells of a page of memory cellsmight be erased to each have a threshold voltage representing an eraseddata state. This population of erased memory cells is indicated at 310and represent a level 0 (L0) data state. The first pass, indicated at300, of a programming operation for a TLC memory might involve loadinglower page data and programming that lower page data. As a result, thepopulation of memory cells might be programmed to their respectivedesired data states corresponding to a population of memory cells 310representing the L0 data state and a population of memory cells 312 arepresenting a lower page (LP) data state. After the first pass, asindicated at 302, the threshold voltage of the LP programmed memorycells 312 a may shift down as indicated by a population of memory cells312 b. This shift down in the threshold voltage of the LP programmedmemory cells might be due to the charge loss mechanism and the timeinterval between the first and second passes of a multiple-passprogramming operation. The time interval between the first and secondpasses of the multiple-pass programming operation may be anywherebetween a few milliseconds and an end of life of the memory device onthe order of years.

The second pass, indicated at 304, of the programming operation for theTLC memory might involve loading higher page data (e.g., upper page dataand extra page data) and programming that higher page data. As a result,a portion of the L0 programmed memory cells 310 might be programmed totheir respective desired data states corresponding to a population ofmemory cells 321 representing a level 1 (L1) data state, a population ofmemory cells 322 representing a level 2 (L2) data state, and apopulation of memory cells 323 representing a level 3 (L3) data state.However, due to the threshold voltage of the LP programmed memory cells312 b having shifted down, the threshold voltage of the L3 programmedmemory cells 323 may overlap the threshold voltage of the LP programmedmemory cells 312 b. If a power loss occurs before completing programmingof the higher page data, the overlapping threshold voltages of the L3programmed memory cells 323 and the LP programmed memory cells 312 bcannot be distinguished from each other when power is restored.

When power is restored, the incomplete programming of the higher pagedata is reinstated as indicated at 306. With the higher page dataprogramming reinstated, the LP programmed memory cells 312 b might beprogrammed to their respective desired data states corresponding to apopulation of memory cells 324 representing a level 4 (L4) data state, apopulation of memory cells 325 representing a level 5 (L5) data state, apopulation of memory cells 326 representing a level 6 (L6) data state,and a population of memory cells 327 representing a level 7 (L7) datastate. However, since the threshold voltage of the L3 programmed memorycells 323 overlaps the threshold voltage of the LP programmed memorycells 312 b, the L3 programmed memory cells 323 might be misplaced(i.e., programmed incorrectly) as indicated, for example, by the largernumber of L5 programmed memory cells 325 when the programming of thehigher page data is reinstated. In this way, the L3 programmed memorycells might be missing as indicated at 314, when the programming of thehigher page data is reinstated, thus resulting in data loss. The variousmodifications to the multiple-pass programming operation described belowwith reference to FIGS. 4-8B prevent overlapping of the L3 programmedmemory cells 323 and the LP programmed memory cells 312 b such that whenthe programming of the higher page data is reinstated after power isrestored, the L3 programmed memory cells 323 are not misplaced.

The population of memory cells 310 might represent a logical data valueof ‘111’, the population of memory cells 321 might represent a logicaldata value of ‘011’, the population of memory cells 322 might representa logical data value of ‘001’, the population of memory cells 323 mightrepresent a logical data value of ‘101’, the population of memory cells324 might represent a logical data value of ‘100’, the population ofmemory cells 325 might represent a logical data value of ‘000’, thepopulation of memory cells 326 might represent a logical data value of‘010’, and the population of memory cells 327 might represent a logicaldata value of ‘110’, where the right-most digit might represent thelower page data for a memory cell having a threshold voltage within thethreshold voltage range of its respective population of memory cells,the center digit might represent the upper page data for that memorycell, and the left-most digit might represent the extra page data forthat memory cell. As is understood in the art, data states of memorycells within the populations of memory cells 310 and 321-327 may bedetermined by applying different read voltages and sensing foractivation of the memory cells at the respective voltages. Although aspecific example of binary representation is provided, embodiments mayuse other arrangements of bit patterns to represent the various datastates.

FIG. 4 depicts representations of populations of memory cells at variousstages of a programming operation according to another embodiment. Inthis embodiment, a controller (e.g., control logic 116 of FIG. 1) may beconfigured to program the multiple-level memory cells via amultiple-pass programming operation. The multiple-pass programmingoperation programs lower page data to the memory cells in a first passand reprograms the lower page data to the memory cells and programshigher page data to the memory cells in a second pass as described belowfor a TLC memory.

The memory cells of a page of memory cells might be erased to each havea threshold voltage representing an erased data state. This populationof erased memory cells is indicated at 310 and represent a L0 datastate. The first pass, indicated at 350, of a programming operation fora TLC memory might involve loading lower page data and programming thatlower page data. As a result, the population of memory cells might beprogrammed to their respective desired data states corresponding to apopulation of memory cells 310 representing the L0 data state and apopulation of memory cells 312 a representing a LP data state. After thefirst pass, as indicated at 352, the threshold voltage of the LPprogrammed memory cells 312 a may shift down as indicated by apopulation of memory cells 312 b as previously described with referenceto FIG. 3.

The second pass, indicated at 354, of the programming operation for theTLC memory might involve first reprogramming the lower page data. As aresult, the threshold voltages of the LP programmed memory cells 312 bare shifted back up as indicated by the population 312 c of LPprogrammed memory cells. The reprogramming of the LP programmed memorycells may include programming by a program-verify operation or by blindpulses without a verify operation.

The second pass of the programming operation then may continue, asindicated at 356, which might involve loading higher page data (e.g.,upper page data and extra page data) and programming that higher pagedata. As a result, a portion of the L0 programmed memory cells 310 mightbe programmed to their respective desired data states corresponding to apopulation of memory cells 321 representing a L1 data state, apopulation of memory cells 322 representing a L2 data state, and apopulation of memory cells 323 representing a L3 data state. However,due to the threshold voltage of the LP programmed memory cells 312 chaving been shifted up, the L3 programmed memory cells 323 do notoverlap the LP programmed memory cells 312 c. If a power loss occursbefore completing programming of the higher page data, the L3 programmedmemory cells 323 can be distinguished from the LP programmed memorycells 312 c when power is restored. Thus, when programming of the higherpage data is reinstated when power is restored, no data is lost.

When power is restored, the incomplete programming of the higher pagedata may be reinstated as indicated at 358. With the higher page dataprogramming reinstated, the LP programmed memory cells 312 c might beprogrammed to their respective desired data states corresponding to apopulation of memory cells 324 representing a L4 data state, apopulation of memory cells 325 representing a L5 data state, apopulation of memory cells 326 representing a L6 data state, and apopulation of memory cells 327 representing a L7 data state.

In another embodiment, the controller may be configured to skip thereprogramming of the lower page data to the memory cells in the secondpass in response to a threshold voltage of the LP programmed memorycells 312 b being above a predetermined threshold voltage (i.e., thethreshold voltage of the LP programmed memory cells 312 b has notshifted down enough to result in the LP programmed memory cells 312 boverlapping the L3 programmed memory cells 323).

FIG. 5 depicts representations of populations of memory cells at variousstages of a programming operation according to another embodiment. Inthis embodiment, a controller (e.g., control logic 116 of FIG. 1) may beconfigured to program the multiple-level memory cells via amultiple-pass programming operation. The multiple-pass programmingoperation programs lower page data to the memory cells in a first passand programs higher page data to the memory cells in a second pass suchthat memory cells to be programmed to higher levels are programmed priorto memory cells to be programmed to lower levels as described below fora TLC memory.

In this example, a two to eight state multiple-pass programmingoperation is used to program a TLC memory. The memory cells of a page ofmemory cells might be erased to each have a threshold voltagerepresenting an erased data state. This population of erased memorycells is indicated at 310 and represent a L0 data state. The first pass,indicated at 370, of a programming operation for a TLC memory mightinvolve loading lower page data and programming that lower page data. Asa result, the population of memory cells might be programmed to theirrespective desired data states corresponding to a population of memorycells 310 representing the L0 state and memory cells 312 a representinga LP data state. After the first pass, as indicated at 372, thethreshold voltage of the LP programmed memory cells 312 a may shift downas indicated by a population of memory cells 312 b as previouslydescribed with reference to FIG. 3.

The second pass, indicated at 374, of the programming operation for theTLC memory might involve first programming the higher levels. The LPprogrammed memory cells 312 b might be programmed to their respectivedesired data states corresponding to a population of memory cells 324representing a L4 data state, a population of memory cells 325representing a L5 data state, and a population of memory cells 326representing a L6 data state, and a population of memory cells 327representing a L7 data state. The second pass of the programmingoperation then may continue, as indicated at 376 and 378, which mightinvolve programming the lower levels. As a result, a portion of the L0programmed memory cells 310 might be programmed to their respectivedesired data states corresponding to a population of memory cells 321representing a L1 data state, a population of memory cells 322representing a L2 data state, and a population of memory cells 323representing a L3 data state. However, due to the higher levels beingprogrammed prior to the lower levels, the L3 programmed memory cells 323do not overlap the LP programmed memory cells 312 b. If a power lossoccurs before completing programming of the higher page data at 376, theL3 programmed memory cells 323 can be distinguished from the L4 andhigher programmed memory cells when power is restored at 378. Thus, whenprogramming of the higher page data is reinstated when power isrestored, no data is lost.

In another embodiment, the controller may be configured to program thehigher page data to the memory cells in the second pass such that memorycells to be programmed to the lower levels are programmed prior to thememory cells to be programmed to the higher levels in response to athreshold voltage of the LP programmed memory cells 312 b being above apredetermined threshold voltage (i.e., if the threshold voltage of theLP programmed memory cells 312 b has not shifted down enough to resultin the LP programmed memory cells 312 b overlapping the L3 programmedmemory cells 323, the lower levels L1, L2, and L3 may be programmedprior to the higher levels L4, L5, L6, and L7).

FIG. 6 depicts representations of populations of memory cells at variousstages of a programming operation according to another embodiment. Inthis embodiment, a controller (e.g., control logic 116 of FIG. 1) may beconfigured to program the multiple-level memory cells via amultiple-pass programming operation. The multiple-pass programmingoperation programs lower page data in a first pass and programs higherpage data in a second pass such that memory cells to be programmed to ahigher level are programmed in parallel with memory cells to beprogrammed to a lower level as described below for a TLC memory.

In this example, a two to eight state multiple-pass programmingoperation is used to program a TLC memory. The memory cells of a page ofmemory cells might be erased to each have a threshold voltagerepresenting an erased data state. This population of erased memorycells is indicated at 310 and represent a L0 data state. The first pass,indicated at 400, of a programming operation for a TLC memory mightinvolve loading lower page data and programming that lower page data. Asa result, the population of memory cells might be programmed to theirrespective desired data states corresponding to a population of memorycells 310 representing the L0 data state and memory cells 312 arepresenting a LP data state. After the first pass, as indicated at 402,the threshold voltage of the LP programmed memory cells 312 a may shiftdown as indicated by a population of memory cells 312 b as previouslydescribed with reference to FIG. 3.

The second pass begins, indicated at 404, by programming the lowerlevels. When memory cells to be programmed to the L3 data state begin toreach the L3 data state as indicated at 410, the memory cells to beprogrammed to the L3 data state and the memory cells to be programmed tothe L4 data state are programmed in parallel as indicated at 406. As aresult, a portion of the L0 programmed memory cells 310 might beprogrammed to their respective desired data states corresponding to apopulation of memory cells 321 representing a L1 data state, apopulation of memory cells 322 representing a L2 data state, and apopulation of memory cells 323 representing a L3 data state. Inaddition, the LP programmed memory cells 312 b might be programmed totheir respective desired data states corresponding to a population ofmemory cells 324 representing a L4 data state, a population of memorycells 325 representing a L5 data state, a population of memory cells 326representing a L6 data state, and a population of memory cells 327representing a L7 data state. However, due to the parallel programmingof the memory cells representing the L3 and L4 data states, the L3programmed memory cells 323 do not overlap the LP programmed memorycells 312 b. If a power loss occurs before completing programming of thehigher page data as indicated at 406, the L3 programmed memory cells 323can be distinguished from the L4 programmed memory cells 324 and theremaining memory cells 412 not yet at their final data states. Thus,when programming of the higher page data is reinstated when power isrestored as indicated at 408, no data is lost.

In another embodiment, the controller may be configured to program thehigher page data in the second pass without programming memory cells tobe programmed to the higher level in parallel with memory cells to beprogrammed to the lower level in response to a threshold voltage of theLP programmed memory cells 312 b being above a predetermined thresholdvoltage (i.e., the threshold voltage of the LP programmed memory cells312 b has not shifted down enough to result in the LP programmed memorycells 312 b overlapping the L3 programmed memory cells 323.)

FIGS. 7A-7B depict a parallel programming operation according to anembodiment for the programming operation described with reference toFIG. 6. In this embodiment, a controller (e.g., control logic 116 ofFIG. 1) may be configured to increase a voltage applied to bit lines ofthe memory cells to be programmed to a lower level (e.g., L3 data state)above a voltage applied to bit lines of the memory cells to beprogrammed to a higher level (e.g., L4 data state) such that the memorycells to be programmed to the higher level may be programmed prior tothe memory cells to be programmed to the lower level.

As illustrated in FIGS. 7A and 7B at 420, the second pass of themultiple-pass programming operation begins by programming the memorycells to be programmed to the lower levels (e.g., L1 and L2). A bit linevoltage V_(BL) (e.g., 0V) is applied to the bit lines of the memorycells to be programmed including the LP programmed memory cells and thememory cells to be programmed to the L1, L2, and L3 data states. The bitline voltage for each corresponding memory cell is increased to theinhibit voltage level (e.g., Vcc) once each corresponding memory cellhas reached its desired data state. Programming pulses V_(PGM) are thenapplied to the selected word line to move selected L0 programmed memorycells 310 to the L1 data state 321, to the L2 data state 322, and towardthe L3 data state as indicated at 410. When the memory cells to beprogrammed to the L3 data state as indicated at 410 begin to pass apredefined threshold voltage level PV_(X) as indicated at 422, thememory cells to be programmed to the L3 data state and the L4 data statemay be programmed in parallel.

In one example, the number of memory cells reaching the PV_(X) level maybe counted until the number exceeds a predefined number. In response tothe number of memory cells reaching the PV_(X) level exceeding thepredefined number, the program voltage V_(PGM) as illustrated in FIG. 7Bmay be increased by a voltage step V_(STEP)*a, where “a” is greater thanor equal to 1. At the same time V_(PGM) is increased by V_(STEP)*a, thebit line voltage of the memory cells to be programmed to the L3 datastate is increased by a predefined voltage ΔV_(BL) (which is less than avoltage level configured to inhibit programming) so that the bit linevoltage of the memory cells to be programmed to L3 data state is greaterthan the bit line voltage of the LP programmed memory cells 312 b. Theincreased bit line voltage for the memory cells to be programmed to theL3 data state retards the programming speed of the memory cells to beprogrammed to the L3 data state. In this way, the LP programmed memorycells 312 b are programmed toward the L4 data state as indicated at 412before the memory cells to be programmed to the L3 data state reach theleft tail of the LP programmed memory cell distribution. Thus, a gap inthe threshold voltage may be maintained between the memory cells to beprogrammed to the L3 data state and the memory cells to be programmed tothe L4 data state. Accordingly, the threshold voltage of the populationof memory cells 323 programmed to the L3 data state do not overlap thethreshold voltage of the population of memory cells 324 programmed tothe L4 data state as indicated at 424, even if power is lost during thesecond pass of the multiple-pass programming operation and theprogramming of the higher page data is reinstated after power isrestored.

As a result, in the second pass of the multiple-pass programmingoperation a portion of the L0 programmed memory cells 310 might beprogrammed to their respective desired data states corresponding to apopulation of memory cells 321 representing a L1 data state, apopulation of memory cells 322 representing a L2 data state, and apopulation of memory cells 323 representing a L3 data state. Inaddition, the LP programmed memory cells 312 b might be programmed totheir respective desired data states corresponding to a population ofmemory cells 324 representing a L4 data state, a population of memorycells 325 representing a L5 data state, a population of memory cells 326representing a L6 data state, and a population of memory cells 327representing a L7 data state as illustrated in FIG. 6.

FIGS. 8A-8B depict a parallel programming operation according to anotherembodiment for the programming operation described with reference toFIG. 6. In this embodiment, a controller (e.g., control logic 116 ofFIG. 1) may be configured to inhibit programming of the memory cells tobe programmed to a lower level (e.g., L3 data state) during programmingof the memory cells to be programmed to a higher level (e.g., L4 datastate) and then resume programming of the memory cells to be programmedto the lower level.

As illustrated in FIGS. 8A and 8B at 430, the second pass of themultiple-pass programming operation begins by programming the memorycells to be programmed to the lower levels (e.g., L1 and L2). A bit linevoltage V_(BL) (e.g., 0V) is applied to the bit lines of the memorycells to be programmed including the LP programmed memory cells and thememory cells to be programmed to the L1, L2, and L3 data states.Programming pulses V_(PGM) are then applied to the selected word line tomove selected L0 programmed memory cells 310 to the L1 data state 321,to the L2 data state 322, and toward the L3 data state as indicated at410. When the memory cells to be programmed to the L3 data state asindicated at 410 begin to pass a predefined threshold voltage levelPV_(X) as indicated at 432, the memory cells to be programmed to the L3data state and the L4 data state may be programmed in parallel.

In one example, the number of memory cells reaching the PV_(X) level maybe counted until the number exceeds a predefined number. In response tothe number of memory cells reaching the PV_(X) level exceeding thepredefined number as indicated at 432, the program voltage V_(PGM) asillustrated in FIG. 8B may be increased by a voltage step V_(STEP)*a,where “a” is greater than or equal to 1. At the same time V_(PGM) isincreased by V_(STEP)*a, the bit line voltage of the memory cells to beprogrammed to the L3 data state is increased to another voltage (e.g.,Vcc) to inhibit programming of the memory cells to be programmed to theL3 data state. With the programming of the memory cells to be programmedto the L3 data state inhibited, the LP programmed memory cells 312 b areprogrammed toward the L4 data state as indicated at 412.

Once the memory cells for the L4 data state are programmed, theprogramming of the memory cells to be programmed to the L3 data stateresumes. The programming of the memory cells to be programmed to the L3data state resumes as indicated at 434 by lowering the bit line voltageof the memory cells to be programmed to the L3 data state to equal thebit line voltage of the LP programmed memory cells (e.g., 0V). At thesame time the bit line voltage of the memory cells to be programmed tothe L3 data state is lowered, the programming voltage V_(PGM) may alsobe reduced to the program voltage of the L3 data state and theprogramming continues. Thus, a gap in the threshold voltage may bemaintained between the memory cells to be programmed to the L3 datastate and the memory cells to be programmed to the L4 data state.Accordingly, the threshold voltage of the population of memory cells 323programmed to the L3 data state do not overlap the threshold voltage ofthe population of memory cells 324 programmed to the L4 data state asindicated at 434, even if power is lost during the second pass of themultiple-pass programming operation and the programming of the higherpage data is reinstated after power is restored.

As a result, in the second pass of the multiple-pass programmingoperation a portion of the L0 programmed memory cells 310 might beprogrammed to their respective desired data states corresponding to apopulation of memory cells 321 representing a L1 data state, apopulation of memory cells 322 representing a L2 data state, and apopulation of memory cells 323 representing a L3 data state. Inaddition, the LP programmed memory cells 312 b might be programmed totheir respective desired data states corresponding to a population ofmemory cells 324 representing a L4 data state, a population of memorycells 325 representing a L5 data state, a population of memory cells 326representing a L6 data state, and a population of memory cells 327representing a L7 data state as illustrated in FIG. 6.

FIG. 9 depicts representations of populations of memory cells at variousstages of a programming operation according to another embodiment. Inthis embodiment, a controller (e.g., control logic 116 of FIG. 1) may beconfigured to program the multiple-level memory cells via amultiple-pass programming operation. The multiple-pass programmingoperation programs lower page data to the memory cells in a first passand reprograms the lower page data to the memory cells and programshigher page data to the memory cells in a second pass as described belowfor a quad-level cell (QLC) memory. A QLC memory may store four bits ofdata per memory cell where the lower page data may include the lower twobits of data.

The memory cells of a page of memory cells might be erased to each havea threshold voltage representing an erased data state. This populationof erased memory cells is indicated at 510 and represent a L0 datastate. The first pass, indicated at 550, of a programming operation fora QLC memory might involve loading lower page data and programming thatlower page data. As a result, the population of memory cells might beprogrammed to their respective desired data states corresponding to apopulation of memory cells 510 representing the L0 data state, apopulation of memory cells 512 a representing a first LP data state, apopulation of memory cells 514 a representing a second LP data state,and a population of memory cells 516 a representing a third LP datastate. After the first pass, as indicated at 502, the threshold voltageof the LP programmed memory cells 512 a, 514 a, and 516 a may shift downas indicated by a populations of memory cells 512 b, 514 b, and 516 b,respectively.

The second pass, indicated at 504, of the programming operation for theQLC memory might involve first reprogramming the lower page data. As aresult, the threshold voltages of the LP programmed memory cells 512 b,514 b, and 516 b are shifted back up as indicated by the populations 512c, 514 c, and 516 c, respectively, of LP programmed memory cells. Thereprogramming of the LP programmed memory cells may include programmingby a program-verify operation or by blind pulses without a verifyoperation.

The second pass of the programming operation then may continue, asindicated at 506, which might involve loading higher page data (e.g.,upper page data and extra page data) and programming that higher pagedata. As a result, a portion of the L0 programmed memory cells 510 mightbe programmed to their respective desired data states corresponding to apopulation of memory cells 521 representing a L1 data state, apopulation of memory cells 522 representing a L2 data state, and apopulation of memory cells 523 representing a L3 data state. A portionof the first LP programmed memory cells 512 c might be programmed totheir respective desired data states corresponding to a population ofmemory cells 524 representing a L4 data state, a population of memorycells 525 representing a L5 data state, a population of memory cells 526representing a L6 data state, and a population of memory cells 527representing a L7 data state.

A portion of the second LP programmed memory cells 514 c might beprogrammed to their respective desired data states corresponding to apopulation of memory cells 528 representing a L8 data state, apopulation of memory cells 529 representing a L9 data state, apopulation of memory cells 530 representing a L10 data state, and apopulation of memory cells 531 representing a L11 data state. Likewise,a portion of the third LP programmed memory cells 516 c might beprogrammed to their respective desired data states corresponding to apopulation of memory cells 532 representing a L12 data state, apopulation of memory cells 533 representing a L13 data state, apopulation of memory cells 534 representing a L14 data state, and apopulation of memory cells 535 representing a L15 data state.

However, due to the threshold voltage of the LP programmed memory cells512 c, 514 c, and 516 c having been shifted up, the L3 programmed memorycells 523 do not overlap the first LP programmed memory cells 512 c, theL7 programmed memory cells 527 do not overlap the second LP programmedmemory cells 514 c, and the L11 programmed memory cells 531 do notoverlap the third LP programmed memory cells 516 c. If a power lossoccurs before completing programming of the higher page data, the L3programmed memory cells 523 can be distinguished from the first LPprogrammed memory cells 512 c, the L7 programmed memory cells 527 can bedistinguished from the second LP programmed memory cells 514 c, and theL11 programmed memory cells 531 can be distinguished from the third LPprogrammed memory cells 516 c when power is restored. Thus, whenprogramming of the higher page data is reinstated when power isrestored, no data is lost.

While the above example for QLC memory describes the reprogramming ofthe lower page data in the second pass of a multiple-pass programmingoperation similar to the TLC memory programming example as describedwith reference to FIG. 4, the TLC memory programming examples describedwith reference to FIG. 5-8B may also be used to program a QLC memory.

FIGS. 10A-10B are flow diagrams illustrating one embodiment of a method600 for programming multiple-level memory cells. In one example, method600 may be implemented by memory device 100 of FIG. 1. As illustrated inFIG. 10A, at 602 method 600 includes programming lower page data tomemory cells in a first pass of a multiple-pass programming operation.At 604, method 600 includes reprogramming the lower page data to thememory cells prior to programming higher page data to the memory cellsin a second pass of the multiple-pass programming operation. In oneexample, programming the higher page data to the memory cells in thesecond pass may include programming the higher page data to the memorycells in the second pass such that in response to power being restoredafter a power loss during the second pass, programming of the higherpage data to the memory cells is reinstated. Programming the higher pagedata to the memory cells may include programming upper page data andextra page data to the memory cells in the second pass.

As illustrated in FIG. 10B, at 606 method 600 may further includepre-reading the lower page programmed memory cells prior to the secondpass using a first read level. At 608, method 600 may further includewherein reprogramming the lower page data to the memory cells prior toprogramming higher page data to the memory cells in the second pass ofthe multiple-pass programming operation is carried out in response to anumber of fail bits of the pre-read lower page memory cells using thefirst read level exceeding a predetermined threshold (e.g., a number offail bits exceeding the number that may be corrected via an errorcorrection code).

FIGS. 11A-11B are flow diagrams illustrating another embodiment of amethod 700 for programming multiple-level memory cells. In one example,method 700 may be implemented by memory device 100 of FIG. 1. Asillustrated in FIG. 11A, at 702 method 700 includes programming lowerpage data to memory cells in a first pass of a multiple-pass programmingoperation. At 704, method 700 includes programming higher page data tothe memory cells in a second pass of the multiple-pass programmingoperation such that higher page data subject to (i.e., programmed from)the programmed lower page data is programmed prior to higher page datasubject to erase data. In one example, programming the higher page datato the memory cells in the second pass may include programming thehigher page data to the memory cells in the second pass such that inresponse to power being restored after a power loss during the secondpass, programming of the higher page data to the memory cells isreinstated. Programming the higher page data to the memory cells mayinclude programming upper page data and extra page data to the memorycells in the second pass.

As illustrated in FIG. 11B, at 706 method 700 may further includepre-reading the lower page programmed memory cells prior to the secondpass using a first read level. At 708, method 700 may further whereinreprogramming the lower page data to the memory cells prior toprogramming higher page data to the memory cells in the second pass ofthe multiple-pass programming operation is carried out in response to anumber of fail bits of the pre-read lower page memory cells using thefirst read level exceeding a predetermined threshold (e.g., a number offail bits exceeding the number that may be corrected via an errorcorrection code).

CONCLUSION

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations ofthe embodiments will be apparent to those of ordinary skill in the art.Accordingly, this application is intended to cover any adaptations orvariations of the embodiments.

What is claimed is:
 1. A method for programming multiple-level memorycells, the method comprising: programming lower page data to memorycells in a first pass of a multiple-pass programming operation; andprogramming higher page data to the memory cells in a second pass of themultiple-pass programming operation such that higher page data subjectto the programmed lower page data is programmed prior to higher pagedata subject to erase data.
 2. The method of claim 1, whereinprogramming the higher page data to the memory cells in the second passcomprises programming the higher page data to the memory cells in thesecond pass such that in response to power being restored after a powerloss during the second pass, programming of the higher page data to thememory cells is reinstated.
 3. The method of claim 1, furthercomprising: pre-reading the lower page programmed memory cells prior tothe second pass using a first read level, wherein reprogramming thelower page data to the memory cells prior to programming higher pagedata to the memory cells in the second pass of the multiple-passprogramming operation is carried out in response to a number of failbits of the pre-read lower page memory cells using the first read levelexceeding a predetermined threshold.
 4. The method of claim 1, whereinprogramming the higher page data to the memory cells comprisesprogramming upper page data and extra page data to the memory cells inthe second pass.
 5. The method of claim 1, wherein the lower page datacomprises a least significant bit to be programmed to the memory cellsand the higher page data comprises a most significant bit to beprogrammed to the memory cells.
 6. The method of claim 1, wherein thememory cells comprise triple level memory cells.
 7. A memory devicecomprising: an array of multiple-level memory cells; and a controllerconfigured to program the multiple-level memory cells via amultiple-pass programming operation, the multiple-pass programmingoperation to program lower page data to the memory cells in a first passand program higher page data to the memory cells in a second pass suchthat memory cells to be programmed to higher levels are programmed priorto memory cells to be programmed to lower levels.
 8. The memory deviceof claim 7, wherein the controller is configured to, in response topower being restored after a power loss during the second pass,reinstate programming of the higher page data to the memory cells. 9.The memory device of claim 7, wherein the controller is configured toprogram the higher page data to the memory cells in the second pass suchthat memory cells to be programmed to the lower levels are programmedprior to the memory cells to be programmed to the higher levels inresponse to a threshold voltage of the lower page programmed memorycells being above a predetermined threshold voltage.
 10. The memorydevice of claim 7, wherein the controller is configured to program themultiple-level memory cells as triple level memory cells.
 11. The memorydevice of claim 7, wherein the controller is configured to program themultiple-level memory cells as quad level memory cells.
 12. The memorydevice of claim 7, wherein the lower page data comprises a leastsignificant bit to be programmed to the memory cells and the higher pagedata comprises a most significant bit to be programmed to the memorycells.
 13. A memory device comprising: an array of multiple-level memorycells; and a controller configured to program the multiple-level memorycells via a multiple-pass programming operation, the multiple-passprogramming operation to program lower page data in a first pass andprogram higher page data in a second pass such that memory cells to beprogrammed to a higher level are programmed in parallel with memorycells to be programmed to a lower level.
 14. The memory device of claim13, wherein the controller is configured to, in response to power beingrestored after a power loss during the second pass, reinstateprogramming of the higher page data to the memory cells.
 15. The memorydevice of claim 13, wherein the controller is configured to increases avoltage applied to data lines of the memory cells to be programmed tothe lower level above a voltage applied to data lines of the memorycells to be programmed to the higher level such that the memory cells tobe programmed to the higher level are programmed prior to the memorycells to be programmed to the lower level.
 16. The memory device ofclaim 13, wherein the controller is configured to inhibit programming ofthe memory cells to be programmed to the lower level during programmingof the memory cells to be programmed to the higher level and thenresumes programming of the memory cells to be programmed to the lowerlevel.
 17. The memory device of claim 13, wherein the controller isconfigured to program the higher page data in the second pass withoutprogramming memory cells to be programmed to the higher level inparallel with memory cells to be programmed to the lower level inresponse to a threshold voltage of the lower page programmed memorycells being above a predetermined threshold voltage.
 18. The memorydevice of claim 13, wherein the controller is configured to program themultiple-level memory cells as triple level memory cells.
 19. The memorydevice of claim 13, wherein the controller is configured to program themultiple-level memory cells as quad level memory cells.
 20. The memorydevice of claim 13, wherein the lower page data comprises a leastsignificant bit to be programmed to the memory cells and the higher pagedata comprises a most significant bit to be programmed to the memorycells.